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ZXMC3A16DN8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
N-Channel P-Channel
UNIT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current@V GS =10V; T A =25 C (b)(d)
@V GS =10V; T A =70 C (b)(d)
@V GS =10V; T A =25 C (a)(d)
Pulsed Drain Current (c)
V DSS
V GS
I D
I DM
30
20
6.4
5.1
4.9
30
-30
20
-5.4
-4.3
-4.1
-25
V
V
A
A
A
A
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode) (c)
(b)
I S
I SM
3.4
30
-3.2
-25
A
A
Power Dissipation at TA=25°C (a)(d)
Linear Derating Factor
Power Dissipation at TA=25°C (a)(e)
Linear Derating Factor
Power Dissipation at TA=25°C (b)(d)
Linear Derating Factor
Operating and Storage Temperature Range
P D
P D
P D
T j :T stg
1.25
10
1.8
14
2.1
17
-55 to +150
W
mW/°C
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient
Junction to Ambient
Junction to Ambient
(a)(d)
(b)(e)
(b)(d)
R θ JA
R θ JA
R θ JA
100
70
60
°C/W
°C/W
°C/W
Notes
(a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t
10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300μs - pulse width limited by maximum junction temperature.
(d) For a dual device with one active die.
(e) For dual device with 2 active die running at equal power.
ISSUE 1 - OCTOBER 2005
2
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